Our production leverages both ​PERC (Passivated Emitter and Rear Cell) and ​N-type (Tunnel Oxide Passivated Contact) technologies:

PERC: Enhances efficiency through reduced carrier recombination, with proven PID resistance for 25+ year stability
N-type : Achieves higher bifaciality (>85%) and lower temperature loss via tunnel oxide/poly-Si layers, outperforming in high-heat/low-light conditions